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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1672 DESCRIPTION *With TO-3 package *High current capability *Fast switching speed APPLICATIONS *Motor control *Linear and switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION * ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 150 120 6 25 30 120 175 -55~175 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 IE=1mA; IC=0 IC=10A;IB=1A IC=20A;IB=2A IC=20A;IB=2A VCB=150V; IE=0 VEB=6V; IC=0 IC=13A ; VCE=2V IC=20A ; VCE=4V 20 10 MIN 120 6 2SC1672 TYP. MAX UNIT V V 0.6 1.2 2.0 0.1 0.1 100 V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1672 Fig.2 Outline dimensions 3 |
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